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Kingston HyperX Impact 8GB 1866MHz DDR3L 1866 204 Pin SODIMM Notebook Gaming Ram HX318LS11IB/8

RM 365.00 RM 399.00 9%
目前缺货
型号
RAM-8GB-KINGSTON-1866-SODIMM-HX318LS11IB/8
品牌
Kingston
状态
缺货
运费
East Malaysia - RM 25.00
West Malaysia - RM 9.50
ZONE 8 - RM 166.00
ZONE 13 - RM 423.00
ZONE 5 - RM 118.00
其他地区/国家的运费
积分
365 分
特点
  • JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
  • VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
  • 933MHz fCK for 1866Mb/sec/pin 8 independent internal bank
  • Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C
  • Asynchronous Reset
  • PCB : Height 1.180 (30.00mm), double sided component
商品介绍

Size (length*width*height): 5cm x 2cm x 17cm

What's in the box:

1 xKingston HyperX Impact 8GB 1866MHz DDR3L 1866 204 Pin SODIMM Notebook Gaming Ram HX318LS11IB/8

HyperX HX318LS11IB/8 is a 1G x 64-bit (8GB) DDR3L-1866 CL11 SDRAM (Synchronous DRAM) 2Rx8, low voltage, memory modules, based on sixteen 512M x 8-bit DDR3 FBGA components. This module has been tested to run at DDR3L-1866 at a low latency timing of 11-11-11 at 1.35V or 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The JEDEC standard electrical and mechanical specifications are as follows:

SPECIFICATIONS

CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 44.7ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.)
Row Active Time (tRASmin) 34ns (min.)
Maximum Operating Power TBD W* @1.35V
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C

*Power will vary depending on the SDRAM used.

PnP JEDEC TIMING PARAMETERS:

DDR3-1866 CL11-11-11 @1.35V or 1.5V

DDR3-1600 CL10-10-10 @1.35V or 1.5V

DDR3-1333 CL8-8-8 @1.35V or 1.5V

FEATURES

  • JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
  • VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
  • 933MHz fCK for 1866Mb/sec/pin 8 independent internal bank
  • Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6, 5
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C
  • Asynchronous Reset
  • PCB : Height 1.180 (30.00mm), double sided component
Kingston HyperX Impact 8GB 1866MHz DDR3L 1866 204 Pin SODIMM Notebook Gaming Ram HX318LS11IB/8
Kingston HyperX Impact 8GB 1866MHz DDR3L 1866 204 Pin SODIMM Notebook Gaming Ram HX318LS11IB/8
Kingston HyperX Impact 8GB 1866MHz DDR3L 1866 204 Pin SODIMM Notebook Gaming Ram HX318LS11IB/8
送货资讯
区域重量运费 (RM)
West Malaysia首 1.00 kg9.50
额外 1.00 kg2.50
East Malaysia首 1.00 kg25.00
额外 1.00 kg25.00
ZONE 8首 1.00 kg166.00
额外 0.50 kg75.00
ZONE 13首 1.00 kg423.00
额外 0.50 kg139.00
ZONE 5首 1.00 kg118.00
额外 0.50 kg60.00
ZONE 2首 1.00 kg85.00
额外 0.50 kg33.00
ZONE 1首 1.00 kg59.00
额外 0.50 kg17.00
ZONE 3首 1.00 kg113.00
额外 0.50 kg92.00
ZONE 4首 1.00 kg102.00
额外 0.50 kg28.00
ZONE 6首 1.00 kg144.00
额外 0.50 kg49.00
ZONE 7首 1.00 kg156.00
额外 0.50 kg70.00
ZONE 9首 1.00 kg214.00
额外 0.50 kg49.00
ZONE 10首 1.00 kg177.00
额外 0.50 kg70.00
ZONE 11首 1.00 kg354.00
额外 0.50 kg97.00
ZONE 12首 1.00 kg375.00
额外 0.50 kg134.00
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